Nonvolatile SRAM (NV-SRAM) using functional MOSFET merged with resistive switching devices-Reference-Cited by-同舟云学术

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Nonvolatile SRAM (NV-SRAM) using functional MOSFET merged with resistive switching devices

Published:2009-09 Issue: Volume: Page:
ISSN:
Container-title:2009 IEEE Custom Integrated Circuits Conference
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Author:

Yamamoto Shuuichirou,Shuto Yusuke,Sugahara Satoshi

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/5268172/5280726/05280761.pdf?arnumber=5280761

Cited by 39 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A novel MTCMOS based 8T2M NVSRAM design for low power applications with high temperature endurance;Semiconductor Science and Technology;2024-07-19

2. Negative Capacitance FET 8T SRAM Computing in-Memory based Logic Design for Energy Efficient AI Edge Devices;2024 IEEE International Symposium on Circuits and Systems (ISCAS);2024-05-19

3. Computing in-memory reconfigurable (accurate/approximate) adder design with negative capacitance FET 6T-SRAM for energy efficient AI edge devices;Semiconductor Science and Technology;2024-03-21

4. A Novel Non-Volatile SRAM with Reduced Read Delay;2023 International Conference on Next Generation Electronics (NEleX);2023-12-14

5. An Error-Free 64KB ReRAM-Based nvSRAM Integrated to a Microcontroller Unit Supporting Real-Time Program Storage and Restoration;IEEE Transactions on Circuits and Systems I: Regular Papers;2023-12

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