Causes of the Difference Between Hall Mobility and Field-Effect Mobility for p-Type RF Sputtered Cu₂O Thin-Film Transistors-Reference-Cited by-同舟云学术

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Causes of the Difference Between Hall Mobility and Field-Effect Mobility for p-Type RF Sputtered Cu₂O Thin-Film Transistors

Published:2020-12 Issue:12 Volume:67 Page:5557-5563
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Jo Jaesung^ORCID,Lenef Julia D.,Mashooq Kishwar,Trejo Orlando,Dasgupta Neil P.^ORCID,Peterson Rebecca L.^ORCID

Funder

Intel Corporation through a PMOS Intel Strategic Research Alliance

Lurie Nanofabrication Facility

University of Michigan College of Engineering

Department of Energy Office of Energy Efficiency and Renewable Energy (EERE) Postdoctoral Research Award

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9269285/09253549.pdf?arnumber=9253549

Cited by 25 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Development of high on/off current ratio in p-type copper oxide thin-film transistors with a back-end-of-line compatible process;Journal of Vacuum Science & Technology A;2024-08-30

2. Influence of Oxygen Flow Rate on the Phase Structures and Properties for Copper Oxide Thin Films Deposited by RF Magnetron Sputtering;Coatings;2024-07-25

3. Advances in Liquid Metal Printed 2D Oxide Electronics;Advanced Functional Materials;2024-06-10

4. Crystal phase control of copper oxide thin films by process pressure during high power impulse magnetron sputtering;Journal of Science: Advanced Materials and Devices;2024-06

5. Reply to: Safe practices for mobility evaluation in field-effect transistors and Hall effect measurements using emerging materials;Nature Electronics;2024-04-17

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