Reply to: Safe practices for mobility evaluation in field-effect transistors and Hall effect measurements using emerging materials
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Publisher
Springer Science and Business Media LLC
Link
https://www.nature.com/articles/s41928-024-01155-7.pdf
Reference22 articles.
1. Liu, A. et al. High-performance inorganic metal halide perovskite transistors. Nat. Electron. 5, 78–83 (2022).
2. Bruevich, V. & Podzorov, V. Safe practices for mobility evaluation in field-effect transistors and Hall effect measurements using emerging materials. Nat. Electron. https://doi.org/10.1038/s41928-024-01154-8 (2024).
3. Xu, Y. et al. Essential effects on the mobility extraction reliability for organic transistors. Adv. Funct. Mater. 28, 1803907 (2018).
4. Ng, H. K. et al. Reply to: Mobility overestimation in molybdenum disulfide transistors due to invasive voltage probes. Nat. Electron. 6, 839–841 (2023).
5. Ma, J., Yang, R. & Chen, H. A large modulation of electron–phonon coupling and an emergent superconducting dome in doped strong ferroelectrics. Nat. Commun. 12, 2314 (2021).
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