Highest efficiency, linear X-band performance using InP DHBTs - 48% PAE at 30 dB C/IM3-Reference-Cited by-同舟云学术

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Highest efficiency, linear X-band performance using InP DHBTs - 48% PAE at 30 dB C/IM3

Published:2001-09 Issue:9 Volume:11 Page:361-363
ISSN:1531-1309
Container-title:IEEE Microwave and Wireless Components Letters
language:
Short-container-title:IEEE Microw. Wireless Compon. Lett.

Author:

Kehias L.,Jenkins T.,Quach T.,Watson P.,Welch R.,Worley R.,Oki A.K.,Yen H.C.,Gutierrez-Aitken A.,Okamura W.,Kaneshiro E.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics

Link

http://xplorestaging.ieee.org/ielx5/7260/20568/00950761.pdf?arnumber=950761

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. GaN- and SiC-Based Power Devices;Comprehensive Semiconductor Science and Technology;2011

2. Performance of High-Reliability and High-Linearity InGaP/GaAs HBT PAs for Wireless Communication;IEEE Transactions on Electron Devices;2010-01

3. Linearity optimizing on HBT power amplifier design;Microelectronics Journal;2009-12

4. High PAE and low intermodulation distortion performance of newly developed GaAs FETs using ion implantation process;2009 Asia Pacific Microwave Conference;2009-12

5. High Linearity InGaP/GaAs Power HBTs by Collector Design;IEEE Electron Device Letters;2004-02

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