Performance of High-Reliability and High-Linearity InGaP/GaAs HBT PAs for Wireless Communication-Reference-Cited by-同舟云学术

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Performance of High-Reliability and High-Linearity InGaP/GaAs HBT PAs for Wireless Communication

Published:2010-01 Issue:1 Volume:57 Page:188-194
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Tu Min-Chang,Ueng Herng-Yih,Wang Yu-Chi

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/5357518/05345815.pdf?arnumber=5345815

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High-power microwave pulse induced failure on InGaP/GaAs heterojunction bipolar transistor;Microelectronics Reliability;2022-12

2. Nonlinear Properties of GaAs/InGaP HBT Under High-Power Microwave Pulse Injection;IEEE Transactions on Plasma Science;2022-09

3. Graphene Packaging for Thermal Management of Innovative Complementary Collector-Up Heterojunction Bipolar Transistors;IEEE Transactions on Components, Packaging and Manufacturing Technology;2018-11

4. Ruggedness Characterization of Bonding Wire Arrays in LDMOSFET-Based Power Amplifiers;IEEE Transactions on Components, Packaging and Manufacturing Technology;2018-06

5. Graphene Heat Spreaders for Thermal Management of InGaP/GaAs Collector-Up HBTs;IEEE Transactions on Electron Devices;2018-01

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