1. Agarwal A, et al. (2005) Influence of basal plane dislocation induced stacking faults on the current gain in SiC BJTs. In: ICSCRM. Pittsburgh, USA.
2. Allen ST, et al. (1995) 4H-SiC MESFET’s on high resistive substrates with 30GHz fmax. In: 53th Device Research Conference. Charlottesville, VA.
3. Progress in high power SiC microwave MESFETs;Allen,1999
4. Alok D, et al. (2003) Method for Improving Inversion Layer Mobility in a Silicon Carbide Metal-Oxide Semiconductor Field-Effect Transistor. US Patent 6,559,068.
5. Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN hetero-structures;Ambacher;Journal of Applied Physics,2000