GaN on silicon E-HEMT and pure silicon MOSFET in high frequency switching of EV DC/DC converter: A comparative study in a nissan leaf-Reference-Cited by-同舟云学术

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GaN on silicon E-HEMT and pure silicon MOSFET in high frequency switching of EV DC/DC converter: A comparative study in a nissan leaf

Published:2016-10 Issue: Volume: Page:
ISSN:
Container-title:2016 IEEE International Telecommunications Energy Conference (INTELEC)
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Author:

Attia Y.,Youssef M.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7736799/7749015/07749112.pdf?arnumber=7749112

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of Frequency and Load on Efficiency of Inductive Wireless Power Transfer Systems;2023 17th European Conference on Antennas and Propagation (EuCAP);2023-03-26

2. Application of Cascode GaN HEMT in LLC Soft Switching Converter;Simulation Tools and Techniques;2022

3. Experimental Evaluation of an Enhanced GaN-Based Non-Symmetric Switching Leg Integrated Module for Synchronous Buck Converter Applications;2021 23rd European Conference on Power Electronics and Applications (EPE'21 ECCE Europe);2021-09-06

4. Advancements in energy efficient GaN power devices and power modules for electric vehicle applications: a review;International Journal of Energy Research;2021-04-04

5. Device and Circuit Models of Monolithic InAlN/GaN NAND and NOR Logic Cells Comprising D- and E-Mode HEMTs;Journal of Circuits, Systems and Computers;2019-12-01

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