Application of Cascode GaN HEMT in LLC Soft Switching Converter
Author:
Publisher
Springer International Publishing
Link
https://link.springer.com/content/pdf/10.1007/978-3-030-97124-3_16
Reference19 articles.
1. Huang, X., Liu, Z., Qiang, L., Lee, F.C.: Evaluation and application of 600V GaN HEMT in cascode structure. In: 2013 Twenty-Eighth Annual IEEE Applied Power Electronics Conference and Exposition (APEC). IEEE (2013)
2. Huang, X., Liu, Z., Qiang, L., Lee, F.C.: Evaluation and application of 600V GaN HEMT in cascode structure. APEC 2013 (2013)
3. Zhang, W., Xu, Z., Zhang, Z., Wang, F., Blalock, B.J.: Evaluation of 600 V cascode GaN HEMT in device characterization and all-GaN-based LLC resonant converter. In: Energy Conversion Congress and Exposition. IEEE (2013)
4. Sugiyama, T., Hung, H., Isobe, Y., Yoshioka, A., Ikeda, K.: Stable cascode GaN HEMT operation by direct gate drive. In: 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD). IEEE (2020)
5. Zhang, W., Wang, F., Tolbert, L.M., Blalock, B.J., Costinett, D.: Investigation of soft-switching behavior of 600 V cascode GaN HEMT. In: 2014 IEEE Energy Conversion Congress and Exposition (ECCE). IEEE (2014)
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