Author:
Zhang Weimin,Xu Zhuxian,Zhang Zheyu,Wang Fred,Tolbert Leon M.,Blalock Benjamin J.
Cited by
44 articles.
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1. A Vertical GaN Split Gate Trench MOSFET Device with Reduced Switching Energy Losses;Springer Proceedings in Physics;2024
2. Vertical GaN MOSFET Power Devices;Micromachines;2023-10-16
3. Time Domain Modelling of LLC Converter;2023 IEEE 14th International Symposium on Power Electronics for Distributed Generation Systems (PEDG);2023-06-09
4. A Comparative Study on P-GaN HEMTs with Schottky/Ohmic Gate Contacts;2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-02-07
5. An Optimized Vertical GaN Parallel Split Gate Trench MOSFET Device Structure for Improved Switching Performance;IEEE Access;2023