A Comparative Study on P-GaN HEMTs with Schottky/Ohmic Gate Contacts
Author:
Affiliation:
1. Shanghai University Key Laboratory of Advanced Display and System Applications (Ministry of Education), Shanghai University,School of Microelectronics,Shanghai,China,200444
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10070854/10070925/10071028.pdf?arnumber=10071028
Reference16 articles.
1. us -Range Evaluation of Threshold Voltage Instabilities of GaN-on-Si HEMTs with p-GaN Gate;canato;IEEE Conference Proceedings,2019
2. On the origin of the leakage current in p-gate AlGaN/GaN HEMTs
3. Bidirectional threshold voltage shift and gate leakage in 650 V p-GaN AlGaN/GaN HEMTs: The role of electron-trapping and hole-injection;yuanyuan;IEEE Conference Proceedings,2018
4. Threshold Voltage Instability in p-GaN Gate AlGaN/GaN HFETs
5. Investigations of the gate instability characteristics in Schottky/ohmic type p-GaN gate normally-off AlGaN/GaN HEMTs
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