Stable cascode GaN HEMT operation by direct gate drive-Reference-Cited by-同舟云学术

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Stable cascode GaN HEMT operation by direct gate drive

Published:2020-09 Issue: Volume: Page:
ISSN:
Container-title:2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD)
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Author:

Sugiyama Toru,Hung Hung,Isobe Yasuhiro,Yoshioka Akira,Yasuzumi Takenori,Sato Yusuke,Tsuji Masataka,Liu Yiyao,Umekawa Shinichi,Kajiwara Yosuke,Koyama Masahiro,Ikeda Kentaro

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9163811/9170028/09170130.pdf?arnumber=9170130

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Experimental Evaluation of a Monolithic Gallium Nitride Devices Solution for Flyback Converter Devoted to Auxiliary Power Supply;2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe);2023-09-04

2. Overview of Wide/Ultrawide Bandgap Power Semiconductor Devices for Distributed Energy Resources;IEEE Journal of Emerging and Selected Topics in Power Electronics;2023-08

3. Paralleled multi-GaN MIS–HEMTs integrated cascode switch for power electronic applications;Semiconductor Science and Technology;2023-05-26

4. Development of GaN HEMT Based Positive/Negative, 5 kV, Nanosecond Pulse Generator for the SLS 2.0 Fast Injection Kicker;2022 IEEE International Power Modulator and High Voltage Conference (IPMHVC);2022-06-19

5. Application of Cascode GaN HEMT in LLC Soft Switching Converter;Simulation Tools and Techniques;2022

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