Development of GaN HEMT Based Positive/Negative, 5 kV, Nanosecond Pulse Generator for the SLS 2.0 Fast Injection Kicker-Reference-Cited by-同舟云学术

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Development of GaN HEMT Based Positive/Negative, 5 kV, Nanosecond Pulse Generator for the SLS 2.0 Fast Injection Kicker

Published:2022-06-19 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE International Power Modulator and High Voltage Conference (IPMHVC)
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Author:

Paraliev Martin¹

Affiliation:

1. Large Research Facilities, RF section Paul Scherrer Institute,Villigen PSI,Switzerland

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10099386/10099388/10099407.pdf?arnumber=10099407

Reference7 articles.

1. Driving CoolGaN™ 600 V high electron mobility transistors;zojer;Application note AN_201702_PL52_012 Infineon Technologies,2018

2. E-mode GaN technology: tips for best driving;comola;Application note AN5583 STMicroelectronics,2021

3. Injection constraints, dynamic aperture, acceptance and lifetime;aiba;The 3rd Topical Workshop on Advanced Low Emittance Rings Technology Ioannina Greece,0

4. Stable cascode GaN HEMT operation by direct gate drive

5. GaN FETs: Why cascode?;chowdhury;Nexperia,2020

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Controlled impedance Marx topology to preserve the rise-time of the individual stages;2023 IEEE Pulsed Power Conference (PPC);2023-06-25

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