Analytical model of drain current in nanowire MOSFETs including quantum confinement, band structure effects and quasi-ballistic transport: device to circuit performances analysis-Reference-Cited by-同舟云学术

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Analytical model of drain current in nanowire MOSFETs including quantum confinement, band structure effects and quasi-ballistic transport: device to circuit performances analysis

Published:2011-09 Issue: Volume: Page:
ISSN:
Container-title:2011 International Conference on Simulation of Semiconductor Processes and Devices
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Author:

Dura J.,Martinie S.,Munteanu D.,Triozon F.,Barraud S.,Niquet Y.M.,Autran J.L.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/6027503/6034916/06035045.pdf?arnumber=6035045

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Analytical model for the drain and gate currents in silicon nanowire and nanosheet MOS transistors valid between 300 and 500 K;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2024-02-23

2. A unified 2-D model for nanowire junctionless accumulation and inversion mode MOSFET in quasi-ballistic regime;Solid-State Electronics;2022-07

3. Analog/RF Performance Analysis of GAA-GNR Tunnel Field-Effect Transistor (TFET);Lecture Notes in Electrical Engineering;2022

4. Hafnium based high-k dielectric gate-stacked (GS) gate material engineered (GME) junctionless nanotube MOSFET for digital applications;Applied Physics A;2021-01

5. Comparative Performance Analysis of Nanowire and Nanotube Field Effect Transistors;Advances in Computer and Electrical Engineering;2021

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