Intrinsic parameter fluctuations in MOSFETs due to structural non-uniformity of high-/spl kappa/ gate stack materials-Reference-Cited by-同舟云学术

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Intrinsic parameter fluctuations in MOSFETs due to structural non-uniformity of high-/spl kappa/ gate stack materials

Published:2005 Issue: Volume: Page:
ISSN:
Container-title:2005 International Conference On Simulation of Semiconductor Processes and Devices
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Author:

Brown A.R.,Watling J.R.,Asenov A.,Bersuker G.,Zeitzoff P.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/10443/33165/01562016.pdf?arnumber=1562016

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impact of Nitridation on Bias Temperature Instability and Hard Breakdown Characteristics of SiON MOSFETs;Micromachines;2023-07-28

3. Bi-Modal Variability of nFinFET Characteristics During Hot-Carrier Stress: A Modeling Approach;IEEE Electron Device Letters;2019-10

4. Intrinsic parameter fluctuations due to random grain orientations in high-κ gate stacks;Journal of Computational Electronics;2006-12-09

5. Study of fluctuations in advanced MOSFETs using a 3D finite element parallel simulator;Journal of Computational Electronics;2006-12-09

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