Physical Model of Incomplete Ionization for Silicon Device Simulation
Author:
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx5/4061562/4061563/04061579.pdf?arnumber=4061579
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1. Incomplete Ionization-Dependent Carrier Mobility in Silicon-on-Insulator n-p-n Double-Gate Tunnel Field-Effect Transistors;Journal of Electronic Materials;2024-01-16
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4. Modeling recombination and contact resistance of poly‐Si junctions;Progress in Photovoltaics: Research and Applications;2020-08-24
5. Size effect of electronic properties in highly arsenic-doped silicon nanowires;Solid-State Electronics;2020-06
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