Size effect of electronic properties in highly arsenic-doped silicon nanowires-Reference-Cited by-同舟云学术

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Size effect of electronic properties in highly arsenic-doped silicon nanowires

Published:2020-06 Issue: Volume:168 Page:107724
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Mauersberger Tom,Ibrahim Imad,Grube Matthias,Heinzig André,Mikolajick Thomas,Weber Walter M.

Funder

German Research Foundation

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference46 articles.

1. High performance silicon nanowire field effect transistors;Cui;Nano Lett,2003

2. Outperforming the conventional scaling rules in the quantum-capacitance limit;Knoch;IEEE Electron Device Lett,2008

3. Silicon and germanium nanowire electronics: physics of conventional and unconventional transistors;Weber;Rep Prog Phys,2017

4. Electronic structure of semiconductor nanowires;Niquet;Phys Rev B,2006

5. Donor deactivation in silicon nanostructures;Björk;Nat Nanotechnol,2009

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4. Significant Resistance Reduction in Modulation‐Doped Silicon Nanowires via Aluminum‐Induced Acceptor States in SiO₂;physica status solidi (a);2023-04-28

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