Cryogenic Total-Ionizing-Dose Response of 4th-Generation SiGe HBTs Using 1-MeV Electrons for Europa-Surface Applications-Reference-Cited by-同舟云学术

Cryogenic Total-Ionizing-Dose Response of 4th-Generation SiGe HBTs Using 1-MeV Electrons for Europa-Surface Applications

Published:2023-04 Issue:4 Volume:70 Page:611-619
ISSN:0018-9499
Container-title:IEEE Transactions on Nuclear Science
language:
Short-container-title:IEEE Trans. Nucl. Sci.

Author:

Teng Jeffrey W.¹^ORCID,Nergui Delgermaa¹^ORCID,Tzintzarov George N.¹^ORCID,Ringel Brett L.¹^ORCID,Brumbach Zachary R.¹^ORCID,Heimerl Justin P.¹^ORCID,Mensah Yaw A.¹^ORCID,Moody Jackson P.¹^ORCID,Thorbourn Dennis O.²^ORCID,Castillo Linda Del²,Mojarradi Mohammad M.²,Blalock Benjamin J.³,Cressler John D.¹^ORCID

Affiliation:

1. School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA

2. Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA, USA

3. Department of Electrical Engineering and Computer Science, The University of Tennessee Knoxville, Knoxville, TN, USA

Funder

National Aeronautics and Space Administration (NASA) through the NASA COLDTech

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics

Link

http://xplorestaging.ieee.org/ielx7/23/10103954/09969663.pdf?arnumber=9969663

Reference41 articles.

1. Gamma radiation tolerance of UHV/CVD SiGe BiCMOS technology operated at cryogenic temperatures

2. Intrinsic carrier concentration and minority‐carrier mobility of silicon from 77 to 300 K

3. The impact of gamma irradiation on SiGe HBTs operating at cryogenic temperatures

4. Temperature dependence of the band gap of silicon

5. A 90nm SiGe BiCMOS technology for mm-wave and high-performance analog applications

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