TID Testing of SiGe Microelectronics Using High-Flux 1-MeV Electrons for Europa-Surface Missions-Reference-Cited by-同舟云学术

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TID Testing of SiGe Microelectronics Using High-Flux 1-MeV Electrons for Europa-Surface Missions

Published:2024-03-02 Issue: Volume: Page:1-9
ISSN:
Container-title:2024 IEEE Aerospace Conference
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Author:

Brumbach Zachary R.¹,Teng Jeffrey W.¹,Nergui Delgermaa¹,Heimerl Justin P.¹,Ringel Brett L.¹,Mensah Yaw A.¹,Sam Delwyn G.¹,Moody Jackson P.¹,Blalock Benjamin J.²,Thorburn Dennis O.³,Del Castillo Linda³,Mojarradi Mohammad M.³,Cressler John D.¹

Affiliation:

1. Georgia Tech,School of Electrical and Computer Engineering,Atlanta,GA,USA,30308

2. University of Tennessee,Department of Electrical and Computer Engineering,Knoxville,TN,USA,37996

3. California Institute of Technology,Jet Propulsion Laboratory,Pasadena,CA,USA,91109

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10520981/10520936/10521075.pdf?arnumber=10521075

Reference14 articles.

1. Europa's near-surface radiation environment

2. Radiation Effects in SiGe Technology

3. Ultra-Low-Power Cryogenic SiGe Low-Noise Amplifiers: Theory and Demonstration

4. SiGe HBT CML Ring Oscillator With 2.3-ps Gate Delay at Cryogenic Temperatures

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