InAlGaN/GaN-HEMT device technologies for W-band high-power amplifier
Author:
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/7572706/7578910/07578927.pdf?arnumber=7578927
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Design Optimization of High Breakdown Voltage AlGaN/GaN High Electron Mobility Transistor with Insulator Dielectric Passivation Layer;e-Journal of Surface Science and Nanotechnology;2023-09-16
2. Enhancement-Mode High-Frequency InAlGaN/GaN MIS-HEMT Fabricated by Implementing Oxygen-Based Digital Etching on the Quaternary Layer;ECS Journal of Solid State Science and Technology;2022-08-01
3. Fabrication and Characterization of a Novel Varistor Based on AlInGaN/GaN Heterojunction Epitaxy on High Resistance Silicon (111) Substrates;IEEE Transactions on Electron Devices;2022-08
4. III-Nitride millimeter wave transistors;III-Nitride Electronic Devices;2019
5. Comprehensive Analysis of Surface Morphology and Growth Mode of AlInGaN Films;physica status solidi (a);2018-09-26
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