The global route to future semiconductor technology
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Instrumentation,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx5/101/21453/00994854.pdf?arnumber=994854
Cited by 13 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Exploring Defects in Semiconductor Materials Through Constant Fermi Level Ab-Initio Molecular Dynamics;Theory and Simulation in Physics for Materials Applications;2020
2. Identification of Semiconductor Defects through Constant-Fermi-Level Ab Initio Molecular Dynamics: Application to GaAs;Physical Review Applied;2017-07-12
3. Room-Temperature Operation of a Single-Electron Transistor Made by Oxidation Process Using the Recessed Channel Structure;Japanese Journal of Applied Physics;2010-11-22
4. Mathematical modeling of nanoscale MOS capacitance in the presence of depletion and energy quantization in a poly-silicon gate;Journal of Semiconductors;2010-11
5. Design of a Testchip for Low Cost IC Testing;Intelligent Automation & Soft Computing;2009-01
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