Room-Temperature Operation of a Single-Electron Transistor Made by Oxidation Process Using the Recessed Channel Structure-Reference-Cited by-同舟云学术

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Room-Temperature Operation of a Single-Electron Transistor Made by Oxidation Process Using the Recessed Channel Structure

Published:2010-11-22 Issue:11 Volume:49 Page:115202
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Lee Joung-Eob,Kim Garam,Wan Kim Kyung,Shim Won Bo,Lee Jung-Han,Kang Kwon-Chil,Yun Jang-Gn,Lee Jong-Ho,Shin Hyungcheol,Park Byung-Gook

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference26 articles.

1. The global route to future semiconductor technology

2. Voltage Gain in GaAs-Based Lateral Single-Electron Transistors Having Schottky Wrap Gates

3. Single-electron devices and their applications

4. Single-electron transistors: Electrostatic analogs of the DC SQUIDS

5. Coulomb blockade oscillations at room temperature in a Si quantum wire metal‐oxide‐semiconductor field‐effect transistor fabricated by anisotropic etching on a silicon‐on‐insulator substrate

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1. Readout using resonant tunneling in silicon spin qubits;Journal of Applied Physics;2023-12-04

2. First principle study of single electron transistor based on metal-organic complex of dibenzothiophene;Organic Electronics;2018-02

3. Analysis of electron transfer among quantum dots in two-dimensional quantum dot network;Japanese Journal of Applied Physics;2014-05-12

4. Dynamic Driving Current Using Side Gate Bias of Single-Electron Transistors;Japanese Journal of Applied Physics;2011-07-20

5. Dynamic Driving Current Using Side Gate Bias of Single-Electron Transistors;Japanese Journal of Applied Physics;2011-07-01

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