Dynamic Driving Current Using Side Gate Bias of Single-Electron Transistors-Reference-Cited by-同舟云学术

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Dynamic Driving Current Using Side Gate Bias of Single-Electron Transistors

Published:2011-07-20 Issue:7 Volume:50 Page:074101
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Lee Joung-Eob,Kim Garam,Kim Kyung-Wan,Lee Jung-Han,Kang Kwon-Chil,Lee Jong-Ho,Shin Hyungcheol,Park Byung-Gook

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference25 articles.

1. Single-electron devices and their applications

2. Single-electron transistors: Electrostatic analogs of the DC SQUIDS

3. Single-electron transistors in heterostructure nanowires

4. Observation of quantum effects and Coulomb blockade in silicon quantum‐dot transistors at temperatures over 100 K

5. Size dependence of the characteristics of Si single-electron transistors on SIMOX substrates

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Progress in nanoscale dry processes for fabrication of high-aspect-ratio features: How can we control critical dimension uniformity at the bottom?;Japanese Journal of Applied Physics;2018-05-25

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