35nm InP HEMT LNAs at E/W-Band Frequencies-Reference-Cited by-同舟云学术

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35nm InP HEMT LNAs at E/W-Band Frequencies

Published:2016-10 Issue: Volume: Page:
ISSN:
Container-title:2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)
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Author:

Estella Nicholas,Bui Lani,Camargo Edmar,Schellenberg James

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7750393/7750996/07751007.pdf?arnumber=7751007

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Full W-Band InP LNA With Enhanced Gain Flatness;IEEE Transactions on Circuits and Systems II: Express Briefs;2024-09

2. W-Band Low-Noise-Amplifier MMICs in InGaAs HEMT Technologies on Gallium-Arsenide and Silicon Substrates;2024 IEEE/MTT-S International Microwave Symposium - IMS 2024;2024-06-16

3. FET Characterization and Modeling Targeting Low-Noise W-Band Applications;2023 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMIC);2023-11-08

4. Modelling, Design, and Characterization Challenges of a Gallium Arsenide High-linearity Low-Noise Amplifier With Gain Control at W-band;2023 18th European Microwave Integrated Circuits Conference (EuMIC);2023-09-18

5. Ultra-Low-Noise 50-nm InGaAs mHEMT Technology and MMICs for Room Temperature and Cryogenic Applications;IGARSS 2023 - 2023 IEEE International Geoscience and Remote Sensing Symposium;2023-07-16

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