Modelling, Design, and Characterization Challenges of a Gallium Arsenide High-linearity Low-Noise Amplifier With Gain Control at W-band
Author:
Affiliation:
1. Università di Roma “Tor Vergata”,Department of Electronic Engineering,Italy
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10288583/10288635/10289083.pdf?arnumber=10289083
Reference15 articles.
1. A W-band InGaAs/InAlAs/InP HEMT Low-Noise Amplifier MMIC with 2.5dB noise figure and 19.4 dB gain at 94GHz
2. W-Band LNA MMICs Based on a Noise-Optimized 50-nm Gate-Length Metamorphic HEMT Technology
3. Figures of Merit for CMOS Low-Noise Amplifiers and Estimates for Their Theoretical Limits
4. An E-band very low noise amplifier with variable gain control on 100 nm GaAs pHEMT technology;byk;2012 7th European Microwave Integrated Circuit Conference EuMIC,2012
5. A 50nm MHEMT millimeter-wave MMIC LNA with wideband noise and gain performance
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