W-Band LNA MMICs Based on a Noise-Optimized 50-nm Gate-Length Metamorphic HEMT Technology-Reference-Cited by-同舟云学术

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W-Band LNA MMICs Based on a Noise-Optimized 50-nm Gate-Length Metamorphic HEMT Technology

Published:2019-06 Issue: Volume: Page:
ISSN:
Container-title:2019 IEEE MTT-S International Microwave Symposium (IMS)
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Author:

Thome Fabian¹,Leuther Arnulf¹,Heinz Felix¹,Ambacher Oliver¹

Affiliation:

1. Fraunhofer Institute for Applied Solid State Physics IAF, Freiburg, 79108, Germany

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8697340/8700641/08700792.pdf?arnumber=8700792

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. W-Band Low-Noise-Amplifier MMICs in InGaAs HEMT Technologies on Gallium-Arsenide and Silicon Substrates;2024 IEEE/MTT-S International Microwave Symposium - IMS 2024;2024-06-16

2. FET Characterization and Modeling Targeting Low-Noise W-Band Applications;2023 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMIC);2023-11-08

3. Low-Noise Amplifiers for the Arctic Weather Satellite;2023 53rd European Microwave Conference (EuMC);2023-09-19

4. Modelling, Design, and Characterization Challenges of a Gallium Arsenide High-linearity Low-Noise Amplifier With Gain Control at W-band;2023 18th European Microwave Integrated Circuits Conference (EuMIC);2023-09-18

5. A X4 Multiplier MMIC to E-Band Frequencies with High Spectral Purity in 50 nm mHEMT Technology;2023 18th European Microwave Integrated Circuits Conference (EuMIC);2023-09-18

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