A W-band InGaAs/InAlAs/InP HEMT Low-Noise Amplifier MMIC with 2.5dB noise figure and 19.4 dB gain at 94GHz-Reference-Cited by-同舟云学术

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A W-band InGaAs/InAlAs/InP HEMT Low-Noise Amplifier MMIC with 2.5dB noise figure and 19.4 dB gain at 94GHz

Published:2008-05 Issue: Volume: Page:
ISSN:
Container-title:2008 20th International Conference on Indium Phosphide and Related Materials
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Author:

Mei X. B.,Lin C. H.,Lee L. J.,Kim Y. M.,Liu P. H.,Lange M.,Cavus A.,To R.,Nishimoto M.,Lai R.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/4694766/4702892/04702933.pdf?arnumber=4702933

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Full W-Band InP LNA With Enhanced Gain Flatness;IEEE Transactions on Circuits and Systems II: Express Briefs;2024-09

2. FET Characterization and Modeling Targeting Low-Noise W-Band Applications;2023 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMIC);2023-11-08

3. A 110–170 GHz Wideband LNA Design Using the InP Technology for Terahertz Communication Applications;Micromachines;2023-10-10

4. Modelling, Design, and Characterization Challenges of a Gallium Arsenide High-linearity Low-Noise Amplifier With Gain Control at W-band;2023 18th European Microwave Integrated Circuits Conference (EuMIC);2023-09-18

5. E-Band Low-Noise Amplifier MMICs Using Nanogate InGaAs/InAlAs HEMT Technology;IEICE Transactions on Electronics;2010

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