A 110–170 GHz Wideband LNA Design Using the InP Technology for Terahertz Communication Applications
-
Published:2023-10-10
Issue:10
Volume:14
Page:1921
-
ISSN:2072-666X
-
Container-title:Micromachines
-
language:en
-
Short-container-title:Micromachines
Author:
Hu Lian12, Yang Ziqiang12, Fang Yuan3, Li Qingfeng12, Miao Yixuan1ORCID, Lu Xiaofeng1, Sun Xuechun1, Zhang Yaxin1
Affiliation:
1. School of Electronic Science and Engineering (National Exemplary School of Microelectronics), University of Electronic Science and Technology of China, Chengdu 610054, China 2. Huzhou Key Laboratory of Terahertz Integrated Circuits and Systems, Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313001, China 3. The 13th Research Institute, CETC, Shijiazhuang 050051, China
Abstract
This paper proposes a low-noise amplifier (LNA) for terahertz communication systems. The amplifier is designed based on 90 nm InP high-electron-mobility transistor (HEMT) technology. In order to achieve high gain of LNA, the proposed amplifier adopts a five-stage amplification structure. At the same time, the use of staggered tuning technology has achieved a large bandwidth of terahertz low-noise amplification. In addition, capacitors are used for interstage isolation, sector lines are used for RF bypass, and Microstrip is used to design matching circuits. The entire LNA circuit was validated using accurate electromagnetic simulation. The simulation results show that at 140 GHz, the small signal gain is 25 dB, the noise figure is 4.4 dB, the input 1 dB compression point is −19 dBm, and the 3 dB bandwidth reaches 60 GHz (110–170 GHz), which validates the effectiveness of the design.
Funder
Sichuan Science and Technology Program under Contract National Natural Science Foundation of China
Subject
Electrical and Electronic Engineering,Mechanical Engineering,Control and Systems Engineering
Reference20 articles.
1. Wang, Y., Wu, H., Li, J., and Fu, X. (2017, January 25–28). The D-band MMIC LNA circuit using 70nm InP HEMT technology. Proceedings of the 2017 IEEE 12th International Conference on ASIC (ASICON), Guiyang, China. 2. A 120–140-GHz LNA in 250-nm InP HBT;Chauhan;IEEE Microw. Wirel. Compon. Lett.,2022 3. An InP HEMT MMIC LNA with 7.2-dB gain at 190 GHz;Lai;IEEE Microw. Guid. Wave Lett.,1998 4. Mei, X.B., Lin, C.H., Lee, L.J., Kim, Y.M., Liu, P.H., Lange, M., Cavus, A., To, R., Nishimoto, M., and Lai, R. (2008, January 25–29). A W-band InGaAs/InAlAs/InP HEMT Low-Noise Amplifier MMIC with 2.5 dB noise figure and 19.4 dB gain at 94 GHz. Proceedings of the 2008 20th International Conference on Indium Phosphide and Related Materials, Versailles, France. 5. Kangaslahti, P., Cleary, K., Kooi, J., Samoska, L., Lai, R., Barsky, M., Mei, X., Sarkozy, S., and Varonen, M. (2017, January 4–9). Sub-20-K noise temperature LNA for 67–90 GHz frequency band. Proceedings of the 2017 IEEE MTT-S International Microwave Symposium (IMS), Honololu, HI, USA.
|
|