Ka-Band LNA MMIC's Realized in Fmax > 580 GHz GaN HEMT Technology-Reference-Cited by-同舟云学术

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Ka-Band LNA MMIC's Realized in Fmax > 580 GHz GaN HEMT Technology

Published:2016-10 Issue: Volume: Page:
ISSN:
Container-title:2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)
language:
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Author:

Micovic Miro,Brown David,Regan Dean,Wong Joel,Tai Joe,Kurdoghlian Ara,Herrault Florian,Tang Yan,Burnham Shawn D.,Fung Helen,Schmitz Adele,Khalaf Isaac,Santos Dayward,Prophet Eric,Bracamontes Hector,McGuire Charles,Grabar Robert

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7750393/7750996/07751051.pdf?arnumber=7751051

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Broadband Low-Noise Ka-Band Front-End MMIC in a 0.15-µm GaN-on-SiC HEMT Technology;2024 IEEE/MTT-S International Microwave Symposium - IMS 2024;2024-06-16

2. Solar-Thermal Synthesized Graphitic Heat Spreader for Thermally Enhanced Organic Substrates;IEEE Transactions on Components, Packaging and Manufacturing Technology;2024-05

3. Circuits for 5G applications implemented in FD-SOI and RF/PD-SOI technologies;New Materials and Devices Enabling 5G Applications and Beyond;2024

4. Challenges and Future Trends;GaN Technology;2024

5. Key-Components for Ultra-low DC Power Gallium Nitride Low-Noise Receivers;Lecture Notes in Electrical Engineering;2023-11-29

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