FDSOI devices with thin BOX and ground plane integration for 32nm node and below

Author:

Fenouillet-Beranger C.,Denorme S.,Perreau P.,Buj C.,Faynot O.,Andrieu F.,Tosti L.,Barnola S.,Salvetat T.,Garros X.,Casse M.,Allain F.,Loubet N.,Pham-NGuyen L.,Deloffre E.,Gros-Jean M.,Beneyton R.,Laviron C.,Marin M.,Leyris C.,Haendler S.,Leverd F.,Gouraud P.,Scheiblin P.,Clement L.,Pantel R.,Deleonibus S.,Skotnicki T.

Publisher

IEEE

Cited by 18 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Prediction of Single-Event Effects in FDSOI Devices Based on Deep Learning;Micromachines;2023-02-21

2. Study of PREB Process in FDSOI;2020 China Semiconductor Technology International Conference (CSTIC);2020-06-26

3. Quasi-Schottky-Barrier UTBB SOI MOSFET for Low-Power Robust SRAMs;IEEE Transactions on Electron Devices;2017-04

4. Impact of Different Mobility Models on 32nm Node UTBB SOI MOSFETs;Advanced Materials Research;2015-06

5. Impact of local back biasing on performance in hybrid FDSOI/bulk high-k/metal gate low power (LP) technology;Solid-State Electronics;2013-10

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