Prediction of Single-Event Effects in FDSOI Devices Based on Deep Learning
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Published:2023-02-21
Issue:3
Volume:14
Page:502
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ISSN:2072-666X
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Container-title:Micromachines
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language:en
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Short-container-title:Micromachines
Author:
Zhao Rong1, Wang Shulong1ORCID, Du Shougang1, Pan Jinbin1, Ma Lan1, Chen Shupeng1, Liu Hongxia1ORCID, Chen Yilei1
Affiliation:
1. School of Microelectronics, Xidian University, Xi’an 710071, China
Abstract
Single-event effects (SEE) are an important index of radiation resistance for fully depleted silicon on insulator (FDSOI) devices. The research into traditional FDSOI devices is based on simulation software, which is time consuming, requires a large amount of calculation, and has complex operations. In this paper, a prediction method for the SEE of FDSOI devices based on deep learning is proposed. The characterization parameters of SEE can be obtained quickly and accurately by inputting different particle incident conditions. The goodness of fit of the network curve for predicting drain transient current pulses can reach 0.996, and the accuracy of predicting the peak value of drain transient current and total collected charge can reach 94.00% and 96.95%, respectively. Compared with TCAD Sentaurus software, the simulation speed is increased by 5.10 × 102 and 1.38 × 103 times, respectively. This method can significantly reduce the computational cost, improve the simulation speed, and provide a new feasible method for the study of the single-event effect in FDSOI devices.
Funder
National Natural Science Foundation of China Natural Science Basic Research Program in Shaanxi Province
Subject
Electrical and Electronic Engineering,Mechanical Engineering,Control and Systems Engineering
Reference38 articles.
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