Selective GeO<inf>x</inf>-scavenging from interfacial layer on Si<inf>1−x</inf>Ge<inf>x</inf> channel for high mobility Si/Si<inf>1−x</inf>Ge<inf>x</inf> CMOS application-Reference-Cited by-同舟云学术

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Selective GeOx-scavenging from interfacial layer on Si1−xGex channel for high mobility Si/Si1−xGex CMOS application

Published:2016-06 Issue: Volume: Page:
ISSN:
Container-title:2016 IEEE Symposium on VLSI Technology
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Author:

Lee C. H.,Kim H.,Jamison P.,Southwick R. G.,Mochizuki S.,Watanabe K.,Bao R.,Galatage R.,Guillaumet S.,Ando T.,Pandey R.,Konar A.,Lherron B.,Fronheiser J.,Siddiqui S.,Jagannathan H.,Paruchuri V.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7569798/7573353/07573369.pdf?arnumber=7573369

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Mobility improvement in accumulation-mode GeOI pMOSFETs with back interface rearrangement by H₂ annealing;Applied Physics Express;2022-05-20

2. Scavenging Segregated Ge on Thin Single-Crystal Si Epitaxially Grown on Ge;ACS Applied Electronic Materials;2021-09-23

3. Reduction of MOS Interface Defects in TiN/Y₂O₃/Si₀.₇₈Ge₀.₂₂ Structures by Trimethylaluminum Treatment;IEEE Transactions on Electron Devices;2020-10

4. Novel vertically stacked Ge0.85Si0.15nGAAFETs above a Si channel with low SS of 76 mV/dec by underneath Si channel and enhancedIon(1.7X atVOV=VDS= 0.5 V) by Ge0.85Si0.15channels;Semiconductor Science and Technology;2020-03-31

5. Impact of metal gate electrodes on electrical properties of Y2O3/Si0.78Ge0.22 gate stacks;Microelectronic Engineering;2019-06

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