Modeling of Bipolar Degradations in 4H-SiC Power MOSFET Devices by a 3C-SiC Inclusive Layer Consideration in the Drift Region-Reference-Cited by-同舟云学术

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Modeling of Bipolar Degradations in 4H-SiC Power MOSFET Devices by a 3C-SiC Inclusive Layer Consideration in the Drift Region

Published:2022-03 Issue:3 Volume:37 Page:2959-2969
ISSN:0885-8993
Container-title:IEEE Transactions on Power Electronics
language:
Short-container-title:IEEE Trans. Power Electron.

Author:

Lachichi Amel^ORCID,Mawby Philip^ORCID

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/63/9632664/09537671.pdf?arnumber=9537671

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Mechanism and Analytical Model for Switching Transient Process in SiC 3L-ANPC Converter;IEEE Access;2024

2. Evaluation of Bipolar Degradation in SiC MOSFETs for Converter Design;2023 IEEE Energy Conversion Congress and Exposition (ECCE);2023-10-29

3. Parallel Connection of Silicon Carbide MOSFETs—Challenges, Mechanism, and Solutions;IEEE Transactions on Power Electronics;2023-08

4. Layered Epitaxial Growth of 3C/4H Silicon Carbide Confined by Surface Micro-Nano Steps;Crystals;2023-07-19

5. A Deep Insight Into the Impact of Bipolar Degradations on Avalanche Robustness of 4H-SiC MOSFETs;IEEE Transactions on Electron Devices;2023-07

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