A Deep Insight Into the Impact of Bipolar Degradations on Avalanche Robustness of 4H-SiC MOSFETs-Reference-Cited by-同舟云学术

A Deep Insight Into the Impact of Bipolar Degradations on Avalanche Robustness of 4H-SiC MOSFETs

Published:2023-07 Issue:7 Volume:70 Page:3726-3734
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Li Kaiwei¹^ORCID,Sun Pengju¹^ORCID,He Zhiyuan²^ORCID,Wu Shuo¹,Luo Quanming¹^ORCID,Du Xiong¹^ORCID

Affiliation:

1. State Key Laboratory of Power Transmission Equipment and System Security and New Technology, Chongqing University, Chongqing, China

2. Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, China Electronic Product Reliability and Environmental Testing Research Institute, Guangzhou, China

Funder

National Natural Science Foundation of China

State Grid Corporation of China through the Science and Technology Project

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10159202/10129936.pdf?arnumber=10129936

Reference32 articles.

1. Impact of Negative Gate Bias and Inductive Load on the Single-Pulse Avalanche Capability of 1200-V SiC Trench MOSFETs

2. Single-Pulse Avalanche Mode Robustness of Commercial 1200 V/80 mΩ SiC MOSFETs

3. The Trench Power MOSFET—Part II: Application Specific VDMOS, LDMOS, Packaging, and Reliability

4. Analysis of Current Capability of SiC Power MOSFETs Under Avalanche Conditions

5. Silicon Carbide

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