The Trench Power MOSFET—Part II: Application Specific VDMOS, LDMOS, Packaging, and Reliability-Reference-Cited by-同舟云学术

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The Trench Power MOSFET—Part II: Application Specific VDMOS, LDMOS, Packaging, and Reliability

Published:2017-03 Issue:3 Volume:64 Page:692-712
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Williams Richard K.^ORCID,Darwish Mohamed N.,Blanchard Richard A.,Siemieniec Ralf,Rutter Phil,Kawaguchi Yusuke

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/7862872/07862937.pdf?arnumber=7862937

Cited by 96 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Drain-Leakage Degradation During Single-Event Burnout Experiments in N-Channel Power VDMOS Transistors;IEEE Transactions on Electron Devices;2024-08

2. Normalization Indicator of Ion-Induced Radiation Damage in Power VDMOS Transistors;IEEE Transactions on Nuclear Science;2024-08

3. Impact of ⁶⁰Co-γ Irradiation Pre-Treatment on Single-Event Burnout in N-Channel Power VDMOS Transistors;IEEE Electron Device Letters;2024-07

4. Ruggedness of Silicon Power MOSFETs—Part I: Cell Structure Design Related Failure: A Review;IEEE Transactions on Electron Devices;2024-06

5. Ruggedness of Silicon Power MOSFETs–Part II: Device Design Failures and Modeling: A Review;IEEE Transactions on Electron Devices;2024-06

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