Compact-Interleaved Packaging Method of Power Module With Dynamic Characterization of 4H-SiC MOSFET and Development of Power Electronic Converter at Extremely High Junction Temperature
Author:
Affiliation:
1. State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an, China
Funder
National Key Research and Development Program of China
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering
Link
http://xplorestaging.ieee.org/ielx7/63/9911205/09857597.pdf?arnumber=9857597
Reference56 articles.
1. Survey of High-Temperature Reliability of Power Electronics Packaging Components
2. A New Characterization Technique for Extracting Parasitic Inductances of SiC Power MOSFETs in Discrete and Module Packages Based on Two-Port S-Parameters Measurement
3. Comprehensive Characterization of the 4H-SiC Planar and Trench Gate MOSFETs From Cryogenic to High Temperature
4. Temperature Dependence of Dynamic Performance Characterization of 1.2-kV SiC Power mosfets Compared With Si IGBTs for Wide Temperature Applications
5. A 1200-V, 60-A SiC MOSFET Multichip Phase-Leg Module for High-Temperature, High-Frequency Applications
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1. Characterization of Electro-Thermal Coupling Behaviors and Safe Operating Area of SiC MOSFET Modules in Pulsed Power Applications;IEEE Transactions on Power Electronics;2024-09
2. An Analytical Switching Loss Model for SiC MOSFET Considering Temperature-Dependent Reverse Recovery Over an Extremely Wide High-Temperature Range;IEEE Transactions on Power Electronics;2024-06
3. Investigation of Two High-Temperature Bipolar Phenomena and Characteristics of 1.2-kV SiC Power Diodes for High-Temperature Applications;IEEE Journal of Emerging and Selected Topics in Power Electronics;2024-02
4. Bipolar Characteristic and Mechanism of Unipolar 1.2-kV Silicon Carbide Power Semiconductors in High Junction Temperature Applications;2023 IEEE 2nd International Power Electronics and Application Symposium (PEAS);2023-11-10
5. Low Temperature Loss-Analysis of SiC MOSFETs for Integrated Motor Drive Applications;2023 IEEE Energy Conversion Congress and Exposition (ECCE);2023-10-29
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