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Impact of Drain Leakage Current on Short Circuit Behavior of GaN/SiC Cascode Devices

  • Published:2021-11 Issue:11 Volume:36 Page:12158-12162
  • ISSN:0885-8993
  • Container-title:IEEE Transactions on Power Electronics
  • language:
  • Short-container-title:IEEE Trans. Power Electron.

Author:

Sun JiahuiORCID,Zheng ZheyangORCID,Zhong KailunORCID,Lyu GangORCID,Chen Kevin J.ORCID

Funder

Shenzhen Science and Technology Innovation Commission

Hong Kong Research Grants Council's Research Impact Fund

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Comparative Investigation on the Repetitive Short-Circuit Capability of 100 V Commercial p-GaN Gate Power HEMTs With Different Processing and Structure;IEEE Transactions on Electron Devices;2024-04

2. Recoverable Current Collapse Effect of p-GaN HEMTs Under Short Circuit Stress;2023 IEEE 2nd International Power Electronics and Application Symposium (PEAS);2023-11-10

3. Study son Short-Circuit Failure Model of GaN/SiC Cascode Devices;2022 IEEE International Power Electronics and Application Conference and Exposition (PEAC);2022-11-04

4. Short-Circuit Failure Mechanisms of 650-V GaN/SiC Cascode Devices in Comparison With SiC MOSFETs;IEEE Transactions on Industrial Electronics;2022-07

5. Short-Circuit Characteristics and High-Current Induced Oscillations in a 1200-V/80-m Normally-Off SiC/GaN Cascode Device;IEEE Transactions on Industrial Electronics;2021
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