Recoverable Current Collapse Effect of p-GaN HEMTs Under Short Circuit Stress-Reference-Cited by-同舟云学术

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Recoverable Current Collapse Effect of p-GaN HEMTs Under Short Circuit Stress

Published:2023-11-10 Issue: Volume: Page:141-144
ISSN:
Container-title:2023 IEEE 2nd International Power Electronics and Application Symposium (PEAS)
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Author:

Wang Meng¹,Li Xiangdong¹,Zhang Jincheng²,Wang Hongyue³,Wang Junbo¹,Han Zhanfei¹,Yuan Jiahui¹,Hao Yue²

Affiliation:

1. Guangzhou Wide Bandgap Semiconductor Innovation Center, Guangzhou Institute of Technology,Guangzhou,China,510555

2. School of Microelectronics, Xidian University,Key Laboratory of Wide Bandgap Semiconductor Materials and Devices,Xi'an,China,710071

3. China Electronic Product Reliability and Environmental Testing Research Institute,Guangzhou,China,511370

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10394673/10394683/10395456.pdf?arnumber=10395456

Reference13 articles.

1. Time- and Field-Dependent Trapping in GaN-Based Enhancement-Mode Transistors With p-Gate

2. Impact of Drain Leakage Current on Short Circuit Behavior of GaN/SiC Cascode Devices

3. Overcurrent and Short-circuit Capability Experimental Investigation for GaN HEMT at Cryogenic Temperature

4. P-GaN HEMTs Drain and Gate Current Analysis Under Short-Circuit

5. High-Temperature Characterization of a 1.2-kV SiC MOSFET Using Dynamic Short-Circuit Measurement Technique

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