Short-Circuit Characteristics and High-Current Induced Oscillations in a 1200-V/80-m Normally-Off SiC/GaN Cascode Device-Reference-Cited by-同舟云学术

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Short-Circuit Characteristics and High-Current Induced Oscillations in a 1200-V/80-m Normally-Off SiC/GaN Cascode Device

Published:2021 Issue: Volume: Page:1-1
ISSN:0278-0046
Container-title:IEEE Transactions on Industrial Electronics
language:
Short-container-title:IEEE Trans. Ind. Electron.

Author:

Lyu Gang,Sun Jiahui,Wang Yuru,Chen Kevin J.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Control and Systems Engineering

Link

http://xplorestaging.ieee.org/ielx7/41/4387790/09658266.pdf?arnumber=9658266

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A High-Frequency GaN-Based Motor Drive for Aircraft Electromechanical Actuators;IEEE Transactions on Industrial Electronics;2024

2. Gate Voltage Oscillation Model and Suppression Method for Enhancement‐Mode GaN Devices in Half‐Bridge Circuits;physica status solidi (a);2023-09-08

3. Trap Dynamic Detection of GaN HEMT under Repetitive Short Circuit Degradation;2023 IEEE International Instrumentation and Measurement Technology Conference (I2MTC);2023-05-22

4. Double-Phase Adaptive Neural Network for Condition-Based Monitoring of p-GaN HEMT Under Repetitive Short-Circuit Stresses;IEEE Transactions on Instrumentation and Measurement;2023

5. A Configuration of 3-phase Traction Inverter Employing {SiC} Devices;2022 IEEE 16th International Conference on Compatibility, Power Electronics, and Power Engineering (CPE-POWERENG);2022-06-29

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