IGBT Condition Monitoring Drive Circuit Based on Self-Excited Short-Circuit Current
Author:
Affiliation:
1. School of Electrical Engineering, Beijing Jiaotong University, Beijing, China
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering
Link
http://xplorestaging.ieee.org/ielx7/63/10197478/10152487.pdf?arnumber=10152487
Reference24 articles.
1. Investigation of gate voltage oscillations in an IGBT module after partial bond wires lift-off
2. A review on real time physical measurement techniques and their attempt to predict wear-out status of IGBT
3. A Novel Bond Wire Fault Detection Method for IGBT Modules Based on Turn-on Gate Voltage Overshoot
4. IGBT drive circuit with health monitoring function;li,2021
5. In situ Condition Monitoring of IGBTs Based on the Miller Plateau Duration
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1. Research of Self-Excited Short Circuit Method for Monitoring IGBT Health Status With Improved Temperature Criterion;IEEE Transactions on Power Electronics;2024-10
2. Review of IGBT Intelligent Gate Drive and Protection Strategies;IEEE Transactions on Power Electronics;2024-06
3. Accuracy of IGBT Junction Temperature Prediction: An Improved Sailfish Algorithm to Optimize Support Vector Machine;IEEE Transactions on Power Electronics;2024-06
4. IGBT Health Monitoring of Traction Converter Based on Self-Excited Short-Circuit Current Function of Drive Circuit;Lecture Notes in Electrical Engineering;2024
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