Investigation of gate voltage oscillations in an IGBT module after partial bond wires lift-off-Reference-Cited by-同舟云学术

Investigation of gate voltage oscillations in an IGBT module after partial bond wires lift-off

Published:2013-02 Issue:2 Volume:53 Page:282-287
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Zhou Luowei,Zhou Shengqi,Xu Mingwei

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

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