In Situ Diagnosis for IGBT Chip Failure in Multichip IGBT Modules Based on a Newly Defined Characteristic Parameter Low-Sensitive to Operation Conditions
Author:
Affiliation:
1. State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an, China
Funder
National Natural Science Foundation of China
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering
Link
http://xplorestaging.ieee.org/ielx7/63/10103360/10061280.pdf?arnumber=10061280
Reference44 articles.
1. Constant ΔTj Power Cycling Strategy in DC Mode for Top-Metal and Bond-Wire Contacts Degradation Investigations
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3. Investigation Into IGBT dV/dt During Turn-Off and Its Temperature Dependence
4. Power cycling reliability of IGBT power modules
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