High-Voltage Isolated Power Supply Structure for Gate Drivers of Medium-Voltage SiC Devices-Reference-Cited by-同舟云学术

High-Voltage Isolated Power Supply Structure for Gate Drivers of Medium-Voltage SiC Devices

Published:2023-06 Issue:6 Volume:38 Page:6907-6911
ISSN:0885-8993
Container-title:IEEE Transactions on Power Electronics
language:
Short-container-title:IEEE Trans. Power Electron.

Author:

Anurag Anup¹^ORCID,Barbosa Peter¹^ORCID

Affiliation:

1. Milan M. Jovanović Power Electronics Lab (MPEL), Delta Electronics (Americas) Ltd., Raleigh, NC, USA

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/63/10103359/10054145.pdf?arnumber=10054145

Reference13 articles.

1. IEEE Standard for General Requirements for Dry-Type Distribution and Power Transformers;IEEE Std C57 12 01-2020 (Revision of IEEE Std C57 12 01-2015),2020

2. High Isolation Auxiliary Power Supply for Medium-Voltage Power Electronics Building Block

3. A Wireless Power Transfer based Gate Driver Design for Medium Voltage SiC MOSFETs

4. A galvanically isolated gate driver with low coupling capacitance for medium voltage SiC MOSFETs

5. REM6E-2424S,2020

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