High-Voltage Isolated Power Supply Structure for Gate Drivers of Medium-Voltage SiC Devices

Author:

Anurag Anup1ORCID,Barbosa Peter1ORCID

Affiliation:

1. Milan M. Jovanović Power Electronics Lab (MPEL), Delta Electronics (Americas) Ltd., Raleigh, NC, USA

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Reference13 articles.

1. IEEE Standard for General Requirements for Dry-Type Distribution and Power Transformers;IEEE Std C57 12 01-2020 (Revision of IEEE Std C57 12 01-2015),2020

2. High Isolation Auxiliary Power Supply for Medium-Voltage Power Electronics Building Block

3. A Wireless Power Transfer based Gate Driver Design for Medium Voltage SiC MOSFETs

4. A galvanically isolated gate driver with low coupling capacitance for medium voltage SiC MOSFETs

5. REM6E-2424S,2020

Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. An Integrated Magnetically Isolated Gate Driver Architecture for SiC MOSFET Applications;2024 IEEE 7th International Electrical and Energy Conference (CIEEC);2024-05-10

2. Design and Optimization of High Performance Gate Driver for Medium-Voltage SiC Power Modules;2024 IEEE Applied Power Electronics Conference and Exposition (APEC);2024-02-25

3. Magnetic Field Effects on Partial Discharges in Electrical Insulation Subjected to PWM Excitation;IEEE Transactions on Power Electronics;2024-02

4. Dual-Channel Isolated Gate Driver Power Supply Based on Ultrasonic Power Transmission Technology;2023 IEEE Fifth International Conference on DC Microgrids (ICDCM);2023-11-15

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