Design and Optimization of High Performance Gate Driver for Medium-Voltage SiC Power Modules-Reference-Cited by-同舟云学术

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Design and Optimization of High Performance Gate Driver for Medium-Voltage SiC Power Modules

Published:2024-02-25 Issue: Volume: Page:2800-2805
ISSN:
Container-title:2024 IEEE Applied Power Electronics Conference and Exposition (APEC)
language:
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Author:

Li Lei¹,Gan Yongmei¹,Yuan Tianshu¹,Ma Dingkun¹,Nie Yan¹,Sun Peiyuan¹,Dong Xiaobo¹,Gao Kai²,Wang Laili¹

Affiliation:

1. Xi’an Jiaotong University,School of Electrical Engineering,Xi’an,China

2. State Grid Shanghai Electric Power Research Institute,Shanghai,China

Funder

State Grid Corporation of China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10509012/10509018/10509293.pdf?arnumber=10509293

Reference11 articles.

1. Gate Drivers for Medium-Voltage SiC Devices

2. Isolated Gate Driver for Medium-Voltage SiC Power Devices Using High-Frequency Wireless Power Transfer for a Small Coupling Capacitance

3. Design of Isolated Gate Driver Power Supply in Medium Voltage Converters using High Frequency and Compact Wireless Power Transfer

4. High-Voltage Isolated Power Supply Structure for Gate Drivers of Medium-Voltage SiC Devices

5. Design Considerations and Development of an Innovative Gate Driver for Medium-Voltage Power Devices With High $dv/dt$

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