A Wireless Power Transfer based Gate Driver Design for Medium Voltage SiC MOSFETs
Author:
Funder
National Science Foundation
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9661583/9661588/09661739.pdf?arnumber=9661739
Reference23 articles.
1. Design Considerations and Development of an Innovative Gate Driver for Medium-Voltage Power Devices With High $dv/dt$
2. Design Considerations for High-Voltage Insulated Gate Drive Power Supply for 10-kV SiC MOSFET Applied in Medium-Voltage Converter
3. High-Density Current-Transformer-Based Gate-Drive Power Supply With Reinforced Isolation for 10-kV SiC MOSFET Modules
4. A galvanically isolated gate driver with low coupling capacitance for medium voltage SiC MOSFETs
5. 7.2-kV/60-A Austin SuperMOS: An Intelligent Medium-Voltage SiC Power Switch
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. High-Voltage Isolated Power Supply Structure for Gate Drivers of Medium-Voltage SiC Devices;IEEE Transactions on Power Electronics;2023-06
2. A Smart Silicon Carbide Power Module With Pulse Width Modulation Over Wi-Fi and Wireless Power Transfer-Enabled Gate Driver, Featuring Onboard State of Health Estimator and High-Voltage Scaling Capabilities;2023 IEEE Applied Power Electronics Conference and Exposition (APEC);2023-03-19
3. Fabrication and Experimental Validation of Low Inductance SiC Power Module with Integrated Microchannel Cooler;2023 IEEE Applied Power Electronics Conference and Exposition (APEC);2023-03-19
4. Gate Driver Power Supply for Medium Voltage SiC Mosfets with Air Core Transformer;2022 IEEE Energy Conversion Congress and Exposition (ECCE);2022-10-09
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