Investigation of Deformation Fluctuation of IGBT Chips Under Switching Conditions Using the Dynamic Field Reconstruction Method
Author:
Affiliation:
1. School of Automation Engineering, University of Electronic Science and Technology of China, Chengdu, China
Funder
National Natural Science Foundation of China
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering
Link
http://xplorestaging.ieee.org/ielx7/63/9952160/09920220.pdf?arnumber=9920220
Reference26 articles.
1. Power Cycling Test Methods for Reliability Assessment of Power Device Modules in Respect to Temperature Stress
2. Fatigue Mechanism of Die-Attach Joints in IGBTs Under Low-Amplitude Temperature Swings Based on 3D Electro-Thermal-Mechanical FE Simulations
3. Dynamic Modeling Method of Electro-Thermo-Mechanical Degradation in IGBT Modules
4. Optimization of wire connections design for power electronics
5. Investigation of the heel crack mechanism in Al connections for power electronics modules
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1. Lifetime Prediction for Lift-off of Bond Wires in IGBTs Using Paris Law With Analytical Calculation of Crack Length;IEEE Transactions on Power Electronics;2023-10
2. Improving Power Cycle Lifetime of SiC Power Modules with Double-Bonded Wire: Experimental and Simulation Analysis;2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe);2023-09-04
3. Dynamic Deformation Oriented Thermo-Mechanical Performance Assessment for Automotive Power Module With Various PWM Schemes;IEEE Transactions on Power Electronics;2023-09
4. In Situ Full-Field Deformation Characterization of Power Module and FEA Model Calibration Based on Stereo Digital Image Methodology;IEEE Transactions on Power Electronics;2023-07
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