Characterization of photoresist poisoning induced by a post etch stripping step-Reference-Cited by-同舟云学术

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Characterization of photoresist poisoning induced by a post etch stripping step

Published: Issue: Volume: Page:
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Container-title:Proceedings of the IEEE 2002 International Interconnect Technology Conference (Cat. No.02EX519)
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Author:

Lamy S.,Louveau O.,Fanget G.,Fayolle M.,Rochat N.,Louis D.,Broussous L.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/7918/21830/01014877.pdf?arnumber=1014877

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Adhesion enhancement and amine reduction using film redeposited at the interface of a stack of plasma-enhanced CVD dielectrics for Cu/low-k interconnects;Japanese Journal of Applied Physics;2019-01-23

2. "Damage Free" Cleaning for Advanced BEOL Interconnections;Solid State Phenomena;2012-04

3. Effect of UV Irradiation on Modification and Subsequent Wet Removal of Model and Post-Etch Fluorocarbon Residues;Journal of The Electrochemical Society;2012

4. Hollow ARROW waveguides on self-aligned pedestals for high-sensitivity optical sensing;SPIE Proceedings;2010-02-11

5. Resist Poisoning Studies of Gap Fill Materials for Patterning Metal Trenches in Via-First Dual Damascene Process;Japanese Journal of Applied Physics;2008-12-19

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