Explaining `Voltage-Driven' Breakdown Statistics by Accurately Modeling Leakage Current Increase in Thin SiON and SiO2/High-K Stacks-Reference-Cited by-同舟云学术

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Explaining `Voltage-Driven' Breakdown Statistics by Accurately Modeling Leakage Current Increase in Thin SiON and SiO2/High-K Stacks

Published:2006 Issue: Volume: Page:
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Container-title:2006 IEEE International Reliability Physics Symposium Proceedings
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Author:

Degraeve R.,Roussel Ph.,Cho M.,Kaczer B.,Kauerauf T.,Crupi F.,Groeseneken G.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/4017118/4017119/04017136.pdf?arnumber=4017136

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Circuit Design-Oriented Stochastic Piecewise Modeling of the Postbreakdown Gate Current in MOSFETs: Application to Ring Oscillators;IEEE Transactions on Device and Materials Reliability;2012-03

2. Injected Charge to Recovery as a Parameter to Characterize the Breakdown Reversibility of Ultrathin HfSiON Gate Dielectric;IEEE Transactions on Device and Materials Reliability;2011-03

3. Reliable cache design with detection of gate oxide breakdown using BIST;2009 IEEE International Conference on Computer Design;2009-10

4. Characterization of SILC and its end-of-life reliability assessment on 45NM high-K and metal-gate technology;2009 IEEE International Reliability Physics Symposium;2009-04

5. Evidence of a new degradation mechanism in high-k dielectrics at elevated temperatures;2009 IEEE International Reliability Physics Symposium;2009-04

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