Injected Charge to Recovery as a Parameter to Characterize the Breakdown Reversibility of Ultrathin HfSiON Gate Dielectric-Reference-Cited by-同舟云学术

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Injected Charge to Recovery as a Parameter to Characterize the Breakdown Reversibility of Ultrathin HfSiON Gate Dielectric

Published:2011-03 Issue:1 Volume:11 Page:126-130
ISSN:1530-4388
Container-title:IEEE Transactions on Device and Materials Reliability
language:
Short-container-title:IEEE Trans. Device Mater. Relib.

Author:

Crespo-Yepes Albert,Martin-Martinez Javier,Rothschild Aude,Rodriguez Rosana,Nafria Montserrat,Aymerich Xavier

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Safety, Risk, Reliability and Quality,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/7298/5729994/05659900.pdf?arnumber=5659900

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Improved Interface Properties and Dielectric Breakdown in Recessed AlGaN/GaN MOS-HEMTs Using HfSiO $_{{x}}$ as Gate Dielectric;IEEE Electron Device Letters;2019-02

2. Temperature dependence of the resistive switching-related currents in ultra-thin high-k based MOSFETs;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2013-03

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