The influence of deep trench and substrate resistance on the latchup robustness in a BiCMOS silicon germanium technology
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Publisher
IEEE
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http://xplorestaging.ieee.org/ielx5/9182/29131/01315314.pdf?arnumber=1315314
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Impact of Trap States at Deep Trench Sidewalls on the Responsivity of Island Photodiodes;IEEE Transactions on Electron Devices;2023-11
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3. Guard rings: Structures, design methodology, integration, experimental results, and analysis for RF CMOS and RF mixed signal BiCMOS silicon germanium technology;Journal of Electrostatics;2006-10
4. The Influence of a Novel Contacted Polysilicon-Filled Deep Trench (DT) Biased Structure and Its Voltage Bias State on CMOS Latchup;2006 IEEE International Reliability Physics Symposium Proceedings;2006-03
5. A review of CMOS latchup and electrostatic discharge (ESD) in bipolar complimentary MOSFET (BiCMOS) Silicon Germanium technologies: Part II—Latchup;Microelectronics Reliability;2005-03
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