Guard rings: Structures, design methodology, integration, experimental results, and analysis for RF CMOS and RF mixed signal BiCMOS silicon germanium technology-Reference-Cited by-同舟云学术

Guard rings: Structures, design methodology, integration, experimental results, and analysis for RF CMOS and RF mixed signal BiCMOS silicon germanium technology

Published:2006-10 Issue:11 Volume:64 Page:730-743
ISSN:0304-3886
Container-title:Journal of Electrostatics
language:en
Short-container-title:Journal of Electrostatics

Author:

Voldman Steven H.,Nicholas Perez Charles,Watson Anne

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Biotechnology,Electronic, Optical and Magnetic Materials

Reference61 articles.

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4. Latchup elimination in bulk CMOS LSI circuits;Schroeder;IEEE Trans. Nucl. Sci.,1980

5. W.D. Raburn, A model for the parasitic SCR in bulk CMOS, International Electron Device Meeting (IEDM) Technical Digest, 1980, pp. 252–255.

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